金属/SiOx 界面におけるシリサイド形成 の変更点



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#author("2020-12-18T17:49:01+09:00","","")
*金属/シリコン酸化物界面におけるシリサイド形成 [#vee1e168]


''REFERENCES''~
+J. -G. Lee, %%%T. Nagase%%%, H. Yasuda, H. Mori, Journal of Applied Physics, 117, 194307 1-8 (2015)., "Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation", http://dx.doi.org/10.1063/1.4921429
+%%%T. Nagase%%%, R. Yamashita, J.-G. Lee, Microscopy, 64, i26 (2015)., "In situ observation of Pt silicide formation at Pt/SiOx interface under electron irradiation", http://dx.doi.org/10.1093/jmicro/dfv102
+%%%T. Nagase%%%, R. Yamashita, J.-G. Lee, Microscopy 65 S1, i32 (2016)., "Electron-Irradiation-Induced Structural Changes at Pt/SiOx Interfaces at 773K", http://dx.doi.org/10.1093/jmicro/dfw064
+%%%T. Nagase%%%, R. Yamashita, J.-G. Lee, AIP Advances, 8, 055110 1-5 (2018)., "In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation", https://doi.org/10.1063/1.5031450

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